RENESAS · FETs & Power MOSFETs · MPN HAT2279N-EL-E
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 410pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 12.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.52nF |
| Type | N-Channel |
80V 30A 800mV 25W 12.3mΩ@10V 1 N-channel N-Channel LFPAK-8 Single FETs, MOSFETs RoHS