RENESAS HAT1139H-EL-E

RENESAS · FETs & Power MOSFETs · MPN HAT1139H-EL-E

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)73nC@10V
Output Capacitance(Coss)720pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)550pF
RDS(on)9mΩ@10V
Input Capacitance(Ciss)3.2nF
TypeP-Channel

Technical details

30V 30A 2.5V 30W 9mΩ@10V P-Channel Single FETs, MOSFETs RoHS

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