RENESAS · FETs & Power MOSFETs · MPN HAT1126RWS-E
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| Current - Continuous Drain(Id) | 6A |
|---|---|
| RDS(on) | 50mΩ@10V |
| Pd - Power Dissipation | 3W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 60V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| Input Capacitance(Ciss) | 2.3nF |
| Gate Charge(Qg) | 37nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 230pF |
6A 50mΩ@10V 3W 2.5V FET, MOSFET Arrays RoHS