RENESAS HAT1126RWS-E

RENESAS · FETs & Power MOSFETs · MPN HAT1126RWS-E

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Specifications

Current - Continuous Drain(Id)6A
RDS(on)50mΩ@10V
Pd - Power Dissipation3W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)140pF
Input Capacitance(Ciss)2.3nF
Gate Charge(Qg)37nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)230pF

Technical details

6A 50mΩ@10V 3W 2.5V FET, MOSFET Arrays RoHS

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