RENESAS HAT1095C-EL-E

RENESAS · FETs & Power MOSFETs · MPN HAT1095C-EL-E

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)3.8nC@4.5V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation830mW
RDS(on)140mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)45pF
Input Capacitance(Ciss)290pF
TypeP-Channel

Technical details

12V 2A 1.2V 830mW 140mΩ@4.5V P-Channel Single FETs, MOSFETs RoHS

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