RENESAS · FETs & Power MOSFETs · MPN H7N1004FN-E
No reviews yet — be the first to review RENESAS H7N1004FN-E.
| Gate Charge(Qg) | 50nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 25W |
| RDS(on) | 35mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| Input Capacitance(Ciss) | 2.8nF |
| Type | N-Channel |
100V 25A 2.5V 25W 35mΩ@10V N-Channel Single FETs, MOSFETs RoHS