RENESAS H7N0308CF-E

RENESAS · FETs & Power MOSFETs · MPN H7N0308CF-E

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Specifications

Gate Charge(Qg)52nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)840pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)480pF
RDS(on)8.5mΩ@4.5V
Input Capacitance(Ciss)3.35nF
TypeN-Channel

Technical details

30V 60A 2.5V 30W 8.5mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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