RENESAS H5N5005PL-E

RENESAS · FETs & Power MOSFETs · MPN H5N5005PL-E

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Specifications

Gate Charge(Qg)300nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)1.06nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)85mΩ@10V
Input Capacitance(Ciss)10.55nF
TypeN-Channel

Technical details

500V 60A 270W 85mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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