RENESAS H5N3007FL-M0-E#T2

RENESAS · FETs & Power MOSFETs · MPN H5N3007FL-M0-E#T2

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage300V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)77pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.18nF

Technical details

300V 15A 4V 35W 160mΩ@10V 1 N-channel TO-220FL Single FETs, MOSFETs RoHS

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