RENESAS · FETs & Power MOSFETs · MPN H5N2901FN-E
No reviews yet — be the first to review RENESAS H5N2901FN-E.
| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 290V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| RDS(on) | 91mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| Input Capacitance(Ciss) | 2.2nF |
| Type | N-Channel |
290V 18A 4V 30W 91mΩ@10V N-Channel Single FETs, MOSFETs RoHS