RENESAS · FETs & Power MOSFETs · MPN H5N2513PL-E
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| Gate Charge(Qg) | 330nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 1.2nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| RDS(on) | 26mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| Input Capacitance(Ciss) | 9.3nF |
| Type | N-Channel |
250V 100A 4V 250W 26mΩ@10V N-Channel Single FETs, MOSFETs RoHS