RENESAS · FETs & Power MOSFETs · MPN H5N2512FN-E
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| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 105mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| Input Capacitance(Ciss) | 2.2nF |
| Type | N-Channel |
250V 18A 4V 35W 105mΩ@10V N-Channel Single FETs, MOSFETs RoHS