RENESAS · FETs & Power MOSFETs · MPN H5N2007FN-E
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| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 410pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| RDS(on) | 47mΩ@10V |
| Input Capacitance(Ciss) | 2.2nF |
| Type | N-Channel |
200V 25A 4V 30W 47mΩ@10V N-Channel Single FETs, MOSFETs RoHS