RENESAS · FETs & Power MOSFETs · MPN BSO615C G
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| Gate Charge(Qg) | 22.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 135pF |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 450mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 460pF |
| Type | N-Channel + P-Channel |
60V 3.1A 2V 2W 450mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel DSO-8 Single FETs, MOSFETs RoHS