RENESAS 4AM14

RENESAS · FETs & Power MOSFETs · MPN 4AM14

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation32W
RDS(on)200mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)130pF
Input Capacitance(Ciss)900pF
TypeN-Channel + P-Channel

Technical details

60V 8A 2V 32W 200mΩ@10V N-Channel + P-Channel Single FETs, MOSFETs RoHS

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