RENESAS 2SK3576-T1B-AT

RENESAS · FETs & Power MOSFETs · MPN 2SK3576-T1B-AT

No reviews yet — be the first to review RENESAS 2SK3576-T1B-AT.

Specifications

Gate Charge(Qg)3.3nC
Drain to Source Voltage20V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)75mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)250pF
TypeN-Channel

Technical details

20V 4A 1.5V 1.25W 75mΩ@2.5V 1 N-channel N-Channel SC-96-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs