RENESAS 2SK3479-Z-E1-AZ

RENESAS · FETs & Power MOSFETs · MPN 2SK3479-Z-E1-AZ

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Specifications

Gate Charge(Qg)210nC@80V
Drain to Source Voltage100V
Current - Continuous Drain(Id)83A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)540pF
RDS(on)13mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)11nF
TypeN-Channel

Technical details

100V 83A 1.5V 125W 13mΩ@4.5V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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