RENESAS 2SK3378ENTL-E

RENESAS · FETs & Power MOSFETs · MPN 2SK3378ENTL-E

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)100mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)7Ω@4V
Number-
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

30V 100mA 2.3V 300mW 7Ω@4V N-Channel Single FETs, MOSFETs RoHS

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