RENESAS · FETs & Power MOSFETs · MPN 2SK3299B-S19-AY
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Output Capacitance(Coss) | 320pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 750mΩ@10V |
| Input Capacitance(Ciss) | 1.73nF |
| Type | N-Channel |
600V 10A 2.5V 75W 750mΩ@10V N-Channel Single FETs, MOSFETs RoHS