RENESAS 2SK3229-E

RENESAS · FETs & Power MOSFETs · MPN 2SK3229-E

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)150nC@25V
Output Capacitance(Coss)1.25nF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation35W
RDS(on)12mΩ@4V
Reverse Transfer Capacitance (Crss@Vds)290pF
Input Capacitance(Ciss)9.7nF
TypeN-Channel

Technical details

80V 60A 2.5V 35W 12mΩ@4V N-Channel Single FETs, MOSFETs RoHS

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