RENESAS 2SK3140-02-E

RENESAS · FETs & Power MOSFETs · MPN 2SK3140-02-E

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Specifications

Configuration-
Gate Charge(Qg)125nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)60A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)12mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)7.1nF

Technical details

60V 60A 1V 35W 12mΩ@4V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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