RENESAS · FETs & Power MOSFETs · MPN 2SK3116B-S19-AY
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Current - Continuous Drain(Id) | 7.5A |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 1.2Ω@10V |
| Type | N-Channel |
600V 7.5A 3.5V 1.5W 1.2Ω@10V N-Channel Single FETs, MOSFETs RoHS