RENESAS 2SK3116B(1)-ZK-E2-AY

RENESAS · FETs & Power MOSFETs · MPN 2SK3116B(1)-ZK-E2-AY

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)7.5A
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation70W
RDS(on)1.2Ω@10V
TypeN-Channel

Technical details

600V 7.5A 3.5V 70W 1.2Ω@10V N-Channel Single FETs, MOSFETs RoHS

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