RENESAS · FETs & Power MOSFETs · MPN 2SK3111-Z-E1-AZ
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| Gate Charge(Qg) | 40nC@160V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 180mΩ@10V |
| Input Capacitance(Ciss) | 1nF |
| Type | N-Channel |
200V 20A 4.5V 65W 180mΩ@10V N-Channel Single FETs, MOSFETs RoHS