RENESAS 2SK3109-Z-E1-AZ

RENESAS · FETs & Power MOSFETs · MPN 2SK3109-Z-E1-AZ

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage200V
Pd - Power Dissipation50W
RDS(on)400mΩ@10V
TypeN-Channel

Technical details

200V 50W 400mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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