RENESAS 2SK3109-AZ

RENESAS · FETs & Power MOSFETs · MPN 2SK3109-AZ

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)400mΩ@10V
Input Capacitance(Ciss)400pF
TypeN-Channel

Technical details

200V 10A 2.5V 1.5W 400mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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