RENESAS 2SK2729-E

RENESAS · FETs & Power MOSFETs · MPN 2SK2729-E

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)900pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)290mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.3nF
TypeN-Channel

Technical details

500V 20A 3.5V 150W 290mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS

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