RENESAS 2SK2727-E

RENESAS · FETs & Power MOSFETs · MPN 2SK2727-E

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Specifications

Gate Charge(Qg)21nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)950mΩ@10V
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

500V 10A 3.5V 100W 950mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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