RENESAS 2SK2008-E

RENESAS · FETs & Power MOSFETs · MPN 2SK2008-E

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Specifications

Drain to Source Voltage250V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)150mΩ@10V
Input Capacitance(Ciss)2.34nF
TypeN-Channel

Technical details

250V 20A 3V 60W 150mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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