RENESAS · FETs & Power MOSFETs · MPN 2SK1968-E
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| Drain to Source Voltage | 600V |
|---|---|
| Output Capacitance(Coss) | 400pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 880mΩ@10V |
| Input Capacitance(Ciss) | 1.8nF |
| Type | N-Channel |
600V 12A 3V 100W 880mΩ@10V N-Channel Single FETs, MOSFETs RoHS