RENESAS 2SK1637-E

RENESAS · FETs & Power MOSFETs · MPN 2SK1637-E

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Specifications

Drain to Source Voltage600V
Current - Continuous Drain(Id)4A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)2.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

600V 4A 3V 35W 2.4Ω@10V 1 N-channel Single FETs, MOSFETs RoHS

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