RENESAS 2SK1629-E

RENESAS · FETs & Power MOSFETs · MPN 2SK1629-E

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Specifications

Drain to Source Voltage500V
Output Capacitance(Coss)780pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation200W
RDS(on)270mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)90pF
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

500V 30A 3V 200W 270mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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