RENESAS 2SK1160-E

RENESAS · FETs & Power MOSFETs · MPN 2SK1160-E

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Specifications

Drain to Source Voltage500V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)800mΩ@10V
Input Capacitance(Ciss)1.15nF
TypeN-Channel

Technical details

500V 8A 2V 60W 800mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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