RENESAS 2SJ687-ZK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN 2SJ687-ZK-E1-AY

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)57nC@16V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.45V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)760pF
RDS(on)7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.4nF

Technical details

P-Channel 20V 20A 1W Surface Mount TO-252

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