RENESAS · FETs & Power MOSFETs · MPN 2SJ649-AZ
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 48mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.9nF |
| Type | P-Channel |
60V 20A 2.5V 25W 48mΩ@10V 1 P-Channel P-Channel TO-220 Single FETs, MOSFETs RoHS