RENESAS · FETs & Power MOSFETs · MPN 2SJ624-T1B-AT
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| Gate Charge(Qg) | 8.1nC@16V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Pd - Power Dissipation | 200mW |
| Reverse Transfer Capacitance (Crss@Vds) | 69pF |
| RDS(on) | 108mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 813pF |
| Type | P-Channel |
20V 4.5A 450mV 200mW 108mΩ@1.8V 1 P-Channel P-Channel SC-96-3 Single FETs, MOSFETs RoHS