RENESAS 2SJ621-T1B-AT

RENESAS · FETs & Power MOSFETs · MPN 2SJ621-T1B-AT

No reviews yet — be the first to review RENESAS 2SJ621-T1B-AT.

Specifications

Drain to Source Voltage12V
Gate Charge(Qg)6.2nC@4V
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)105mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)630pF
TypeP-Channel

Technical details

12V 3.5A 1.5V 1.25W 105mΩ@1.8V 1 P-Channel P-Channel SC-96-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs