RENESAS · FETs & Power MOSFETs · MPN 2SJ605-ZJ-E1-AZ
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| Gate Charge(Qg) | 87nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 20mΩ@10V |
| Input Capacitance(Ciss) | 4.6nF |
| Type | P-Channel |
60V 65A 2.5V 100W 20mΩ@10V P-Channel Single FETs, MOSFETs RoHS