RENESAS 2SJ598-ZK-E1-AZ

RENESAS · FETs & Power MOSFETs · MPN 2SJ598-ZK-E1-AZ

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation23W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)190mΩ@4V
Number1 P-Channel
Input Capacitance(Ciss)720pF
TypeP-Channel

Technical details

P-Channel 60V 12A 23W Surface Mount TO-252(MP-3ZK)

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