RENESAS 2SJ557-T1B-A

RENESAS · FETs & Power MOSFETs · MPN 2SJ557-T1B-A

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Specifications

Gate Charge(Qg)2.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)2.5A
Pd - Power Dissipation1.25W
RDS(on)155mΩ@10V
TypeP-Channel

Technical details

30V 2.5A 1.25W 155mΩ@10V P-Channel Single FETs, MOSFETs RoHS

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