RENESAS 2SJ387STL-E

RENESAS · FETs & Power MOSFETs · MPN 2SJ387STL-E

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)860pF
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)100mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)1.17nF

Technical details

20V 10A 1.5V 20W 100mΩ@2.5V 1 P-Channel P-Channel Single FETs, MOSFETs RoHS

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