RENESAS 2SJ387L-E

RENESAS · FETs & Power MOSFETs · MPN 2SJ387L-E

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Specifications

Drain to Source Voltage20V
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation20W
RDS(on)70mΩ@4V
TypeP-Channel

Technical details

20V 10A 1.5V 20W 70mΩ@4V P-Channel Single FETs, MOSFETs RoHS

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