RENESAS · FETs & Power MOSFETs · MPN 2SJ356-T1-AZ
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| Gate Charge(Qg) | 11.6nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 145pF |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 950mΩ@4V |
| Input Capacitance(Ciss) | 270pF |
| Type | P-Channel |
60V 2A 1V 2W 950mΩ@4V P-Channel Single FETs, MOSFETs RoHS