RENESAS · FETs & Power MOSFETs · MPN 2SJ356(0)-T1-AY
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| Gate Charge(Qg) | 11.6nC@10V |
|---|---|
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 950mΩ@4V |
| Type | P-Channel |
2A 2V 2W 950mΩ@4V P-Channel Single FETs, MOSFETs RoHS