RENESAS 2SJ355-T1-AZ

RENESAS · FETs & Power MOSFETs · MPN 2SJ355-T1-AZ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12.2nC@24V
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)600mΩ@4V
Number1 P-Channel
Input Capacitance(Ciss)300pF
TypeP-Channel

Technical details

30V 2A 2V 2W 600mΩ@4V 1 P-Channel P-Channel SC-62 Single FETs, MOSFETs RoHS

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