RENESAS 2SJ327-AZ

RENESAS · FETs & Power MOSFETs · MPN 2SJ327-AZ

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)410pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)340mΩ@4V
Input Capacitance(Ciss)750pF
TypeP-Channel

Technical details

60V 4A 2V 2W 340mΩ@4V P-Channel Single FETs, MOSFETs RoHS

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