RENESAS 2SJ216-E

RENESAS · FETs & Power MOSFETs · MPN 2SJ216-E

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Specifications

Drain to Source Voltage60V
Output Capacitance(Coss)1.3nF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)340pF
RDS(on)60mΩ@10V
Input Capacitance(Ciss)2.4nF
TypeP-Channel

Technical details

60V 35A 2V 50W 60mΩ@10V P-Channel Single FETs, MOSFETs RoHS

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