RENESAS · FETs & Power MOSFETs · MPN 2SJ216-E
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| Drain to Source Voltage | 60V |
|---|---|
| Output Capacitance(Coss) | 1.3nF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF |
| RDS(on) | 60mΩ@10V |
| Input Capacitance(Ciss) | 2.4nF |
| Type | P-Channel |
60V 35A 2V 50W 60mΩ@10V P-Channel Single FETs, MOSFETs RoHS