RENESAS 2SJ211(0)-T1B-A

RENESAS · FETs & Power MOSFETs · MPN 2SJ211(0)-T1B-A

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)30Ω@4V
Input Capacitance(Ciss)27pF
TypeP-Channel

Technical details

100V 200mA 2.4V 200mW 30Ω@4V P-Channel Single FETs, MOSFETs RoHS

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