RENESAS 2SJ172-E

RENESAS · FETs & Power MOSFETs · MPN 2SJ172-E

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Specifications

Current - Continuous Drain(Id)10A
RDS(on)250mΩ@4V
Pd - Power Dissipation40W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage60V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)130pF
Input Capacitance(Ciss)-
Operating Temperature-55℃~+150℃

Technical details

10A 250mΩ@4V 40W 2V FET, MOSFET Arrays RoHS

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