RENESAS 2SJ166-T1B-A

RENESAS · FETs & Power MOSFETs · MPN 2SJ166-T1B-A

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Specifications

Drain to Source Voltage50V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)100mA
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation200mW
RDS(on)50Ω@4V
Reverse Transfer Capacitance (Crss@Vds)3pF
Input Capacitance(Ciss)18pF
TypeP-Channel

Technical details

50V 100mA 3V 200mW 50Ω@4V P-Channel Single FETs, MOSFETs RoHS

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