RENESAS 2SC5890FS-TL-E

RENESAS · Transistors (BJTs) · MPN 2SC5890FS-TL-E

No reviews yet — be the first to review RENESAS 2SC5890FS-TL-E.

Specifications

Emitter-Base Voltage(Vebo)1.5V
Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation700mW
Current - Collector(Ic)75mA
Transition frequency(fT)7.8GHz
typeNPN
Number1 NPN

Technical details

12V 700mW 75mA NPN Bipolar RF Transistors RoHS

Related Transistors (BJTs)